A low insertion loss RF switch using a 130 nm SOI process

Abstract To realize a better radio frequency (RF) communication system, the RF switch, as an important module, is used to cooperate with other devices form front end for optimizing performances. This paper designs single-pole multi-throw (SPMT) which exhibits low insertion loss of 0.57 dB at 1.9 GHz under voltage 2.2 4.7 V. The switch fabricated using 130 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process. It can be in multi-frequency and multi-mode applications such 4G/5G. proposed has competitive performance combined modules achieve wireless promote development ultra-wideband systems.